Low Power, High speed, Low leakage Floating Gate SRAM Cell using LECTOR Technique
نویسندگان
چکیده
منابع مشابه
Low Power FGSRAM Cell Using Sleepy and LECTOR Technique
In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm stan...
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ژورنال
عنوان ژورنال: Indian Journal of Science and Technology
سال: 2016
ISSN: 0974-5645,0974-6846
DOI: 10.17485/ijst/2016/v9i45/98971